STP80NF10

Manufacturer:STMicroelectronics
Product Category:MOSFET
RoHS:Details

Technology:Si
Mounting Style:Through Hole
Package / Case:TO-220-3
Number of Channels:1 Channel
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:100 V
Id - Continuous Drain Current:80 A
Rds On - Drain-Source Resistance:15 mOhms
Vgs th - Gate-Source Threshold Voltage:2 V
Vgs - Gate-Source Voltage:10 V
Qg - Gate Charge:135 nC
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 175 C
Configuration:Single
Pd - Power Dissipation:300 W
Channel Mode:Enhancement
Height:9.15 mm
Length:10.4 mm
Series:STB80NF10
Transistor Type:1 N-Channel Power MOSFET
Type:MOSFET
Width:4.6 mm
Brand:STMicroelectronics
Forward Transconductance - Min:50 S
Fall Time:60 ns
Product Type:MOSFET
Rise Time:80 ns
Factory Pack Quantity:50
Typical Turn-Off Delay Time:116 ns
Typical Turn-On Delay Time:26 ns