2SC3355 – DIP

درباره این محصول

• DESCRIPTION
• The 2SC3355 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.
• FEATURES
• • Low Noise and High GainNF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz• High Power GainMAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
• ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
• Collector to Base Voltage VCBO 20 VCollector to Emitter Voltage VCEO 12 VEmitter to Base Voltage VEBO 3.0 VCollector Current IC 100 mATotal Power Dissipation PT 200 mWJunction Temperature Tj 150 CStorage Temperature Tstg 65 to +150 C