STP80NF10

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• Manufacturer:STMicroelectronicsProduct Category:MOSFETRoHS:DetailsTechnology:SiMounting Style:Through HolePackage / Case:TO-220-3Number of Channels:1 ChannelTransistor Polarity:N-ChannelVds - Drain-Source Breakdown Voltage:100 VId - Continuous Drain Current:80 ARds On - Drain-Source Resistance:15 mOhmsVgs th - Gate-Source Threshold Voltage:2 VVgs - Gate-Source Voltage:10 VQg - Gate Charge:135 nCMinimum Operating Temperature:- 55 CMaximum Operating Temperature:+ 175 CConfiguration:SinglePd - Power Dissipation:300 WChannel Mode:EnhancementHeight:9.15 mmLength:10.4 mmSeries:STB80NF10Transistor Type:1 N-Channel Power MOSFETType:MOSFETWidth:4.6 mmBrand:STMicroelectronicsForward Transconductance - Min:50 SFall Time:60 nsProduct Type:MOSFETRise Time:80 nsFactory Pack Quantity:50Typical Turn-Off Delay Time:116 nsTypical Turn-On Delay Time:26 ns