FQA11N90C

درباره این محصول

• Manufacturer:ON Semiconductor
• Product Category:MOSFET
• RoHS:Details
• Technology:Si
• Mounting Style:Through Hole
• Package / Case:TO-3PN-3
• Number of Channels:1 Channel
• Transistor Polarity:N-Channel
• Vds - Drain-Source Breakdown Voltage:900 V
• Id - Continuous Drain Current:11 A
• Rds On - Drain-Source Resistance:1.4 Ohms
• Vgs - Gate-Source Voltage:30 V
• Minimum Operating Temperature:- 55 C
• Maximum Operating Temperature:+ 150 C
• Pd - Power Dissipation:300 W
• Configuration:Single
• Channel Mode:Enhancement
• Tradename:QFET
• Packaging:Tube
• Height:20.1 mm
• Length:16.2 mm
• Series:FQA11N90C_F109
• Transistor Type:1 N-Channel
• Width:5 mm
• Brand:ON Semiconductor / Fairchild
• Fall Time:85 ns
• Product Type:MOSFET
• Rise Time:130 ns
• Factory Pack Quantity:450
• Subcategory:MOSFETs
• Typical Turn-Off Delay Time:130 ns
• Typical Turn-On Delay Time:60 ns
• Unit Weight:6.401 g