FGH60N60SMD

درباره این محصول

• Manufacturer: onsemi
• Product Category: IGBT Transistors
• Technology: Si
• Package / Case: TO-247
• Mounting Style: Through Hole
• Collector- Emitter Voltage VCEO Max: 600 V
• Collector-Emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 120 A
• Pd - Power Dissipation: 600 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Series: FGH60N60SMD
• Packaging: Tube
• Brand: onsemi / Fairchild
• Gate-Emitter Leakage Current: 400 nA
• Product Type: IGBT Transistors
• Subcategory: IGBTs
• Unit Weight: 0.225401 oz